In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8B ( 1997-08-01), p. L1113-
Kurzfassung:
The existence of interdiffusion between self-assembled InAs quantum dots and a GaAs substrate has been investigated using ordinary Rutherford backscattering which is also useful for determining the value of the average InAs layer thickness. As a result, evidence for the diffusion of Ga atoms into the dot is obtained. Furthermore, spatial distribution of the diffused Ga atoms in InAs dots is suggested.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L1113
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1997
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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