In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 4, No. 3 ( 1986-05-01), p. 889-893
Abstract:
Epitaxial Ge is grown on (100)Si substrates by molecular beam epitaxy (MBE). The effect of various MBE growth conditions on both the nucleation and morphology of Ge grown on Si is studied by Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and reflection high-energy electron diffraction (RHEED). These studies indicate that, at the substrate temperatures examined (300–600 °C), heteroepitaxy of Ge on Si favors three-dimensional growth, which is enhanced by both higher growth temperatures and substrate preparation techniques that leave residual surface contamination. Heavily doped n+ Ge layers are obtained using an elemental As source. The electrical properties of these films are evaluated by Hall–van der Pauw measurements. Growth temperatures of 250 °C and optimum As:Ge flux ratios yield electron concentrations as high as 2.5×1020 cm−3. Secondary ion mass spectroscopy (SIMS) and Hall effect data show that for As concentrations which exceed this optimum level, a decrease in both the electron concentration and drift mobility is observed, indicating the presence of electrically inactive As.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1986
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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