In:
SID Symposium Digest of Technical Papers, Wiley, Vol. 52, No. 1 ( 2021-05), p. 777-779
Abstract:
Quantum‐dot‐based a‐IGZO phototransistor has become one of the promising devices for image sensor application due to its bandgap tunability and solution‐process compatibility. However, the QD phototransistor with a‐IGZO, which contains a large amount of charge traps on the surface, exhibited slow photoresponse (τ decay 〉 10 s). In this work, the photocurrent and decay time were significantly enhanced by 2.2 times and 73%, respectively, by introducing a self‐assembled monolayer (SAM), which effectively passivates the traps at the QD/a‐IGZO interface.
Type of Medium:
Online Resource
ISSN:
0097-966X
,
2168-0159
Language:
English
Publisher:
Wiley
Publication Date:
2021
detail.hit.zdb_id:
2526337-7
Permalink