In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6A ( 1993-06-01), p. L764-
Abstract:
AgGaS 2 thin films have been prepared on quartz substrates by means of XeCl excimer laser deposition from a mixture target of Ag 2 S and Ga 2 S 3 . Measurements of X-ray diffraction, Raman scattering, transmission and photoluminescence spectra show that the deposited films were chalcopyrite-type, AgGaS 2 compound highly oriented in the 〈 112 〉 direction.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L764
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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