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  • 1
    Online Resource
    Online Resource
    IOP Publishing ; 2019
    In:  Journal of Physics: Condensed Matter Vol. 31, No. 12 ( 2019-03-27), p. 125701-
    In: Journal of Physics: Condensed Matter, IOP Publishing, Vol. 31, No. 12 ( 2019-03-27), p. 125701-
    Type of Medium: Online Resource
    ISSN: 0953-8984 , 1361-648X
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 1472968-4
    detail.hit.zdb_id: 228975-1
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  • 2
    Online Resource
    Online Resource
    American Physical Society (APS) ; 2023
    In:  Physical Review B Vol. 108, No. 7 ( 2023-8-18)
    In: Physical Review B, American Physical Society (APS), Vol. 108, No. 7 ( 2023-8-18)
    Type of Medium: Online Resource
    ISSN: 2469-9950 , 2469-9969
    RVK:
    Language: English
    Publisher: American Physical Society (APS)
    Publication Date: 2023
    detail.hit.zdb_id: 2844160-6
    detail.hit.zdb_id: 209770-9
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  • 3
    Online Resource
    Online Resource
    Elsevier BV ; 2019
    In:  Computational Materials Science Vol. 161 ( 2019-04), p. 16-23
    In: Computational Materials Science, Elsevier BV, Vol. 161 ( 2019-04), p. 16-23
    Type of Medium: Online Resource
    ISSN: 0927-0256
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2019
    detail.hit.zdb_id: 1134845-8
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  • 4
    Online Resource
    Online Resource
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 6 ( 2022-08-08)
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 6 ( 2022-08-08)
    Abstract: For two-dimensional (2D) materials, piezoelectric ferromagnetism with large out-of-plane piezoresponse is highly desirable for multifunctional ultrathin piezoelectric device application. Here, we predict that Janus monolayer CrSCl is an out-of-plane ferromagnetic semiconductor with large vertical piezoelectric response and high Curie temperature. The predicted out-of-plane piezoelectric strain coefficient d31 is −1.58 pm/V, which is higher than that of most 2D materials (compare absolute values of d31). The large out-of-plane piezoelectricity is robust against electronic correlation and biaxial strain, confirming reliability of large d31. The calculated results show that tensile strain is conducive to high Curie temperature, large magnetic anisotropy energy, and large d31. Finally, by comparing d31 of CrYX (Y = S; X = Cl, Br, I) and CrYX (Y = O; X = F, Cl, Br), we conclude that the size of d31 is positively related to electronegativity difference of X and Y atoms. Such findings can provide valuable guidelines for designing 2D piezoelectric materials with large vertical piezoelectric response.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  Journal of Applied Physics Vol. 129, No. 21 ( 2021-06-07)
    In: Journal of Applied Physics, AIP Publishing, Vol. 129, No. 21 ( 2021-06-07)
    Abstract: A two-dimensional (2D) material system with both piezoelectric and ferromagnetic (FM) orders, referred to as a 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for intriguing physics. Inspired by experimentally synthesized Janus monolayer MoSSe from MoS2, in this work, the Janus monolayer CrBr1.5I1.5 with dynamic, mechanical, and thermal stabilities is predicted, which is constructed from synthesized ferromagnetic CrI3 monolayer by replacing the top I atomic layer with Br atoms. Calculated results show that monolayer CrBr1.5I1.5 is an intrinsic FM half semiconductor with valence and conduction bands being fully spin-polarized in the same spin direction. Furthermore, monolayer CrBr1.5I1.5 possesses a sizable magnetic anisotropy energy. By symmetry analysis, it is found that both in-plane and out-of-plane piezoelectric polarizations can be induced by a uniaxial strain in the basal plane. The calculated in-plane d22 value of 0.557 pm/V is small. However, more excitingly, the out-of-plane d31 is as high as 1.138 pm/V, which is obviously higher compared with that of other 2D known materials. The strong out-of-plane piezoelectricity is highly desirable for ultrathin piezoelectric devices. Moreover, strain engineering is used to tune piezoelectricity of monolayer CrBr1.5I1.5. It is found that compressive strain can improve d22 and tensile strain can enhance d31. A FM order to antiferromagnetic order phase transition can be induced by compressive strain, and the critical point is about 0.95 strain. That is to say that 2D piezoelectric antiferromagnetism can be achieved by compressive strain, and the corresponding d22 and d31 are 0.677 and 0.999 pm/V at 0.94 strain, respectively. It is also found that magnetic order has important effects on piezoelectricity of monolayer CrBr1.5I1.5. Finally, similar to CrBr1.5I1.5, the PFM can also be realized in the monolayers CrF1.5I1.5 and CrCl1.5I1.5. Amazingly, their d31 can reach up to 2.578 and 1.804 pm/V for monolayers CrF1.5I1.5 and CrCl1.5I1.5. Our paper proposes a realistic way to achieve PFM with large d31, making these systems very promising for multifunctional semiconductor spintronic applications.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    AIP Publishing ; 2019
    In:  Journal of Applied Physics Vol. 126, No. 15 ( 2019-10-21)
    In: Journal of Applied Physics, AIP Publishing, Vol. 126, No. 15 ( 2019-10-21)
    Abstract: Due to their great potential in electronics, optoelectronics, and piezoelectronics, Janus transition metal dichalcogenide monolayers have attracted an increased interest in research, and the MoSSe monolayer of them with the sandwiched S-Mo-Se structure has been synthesized experimentally. Here, we systematically study the effect of strain on electronic structures and transport properties of the Janus PtSSe monolayer. A detrimental effect on the power factor of the PtSSe monolayer can be observed when the spin-orbital coupling is included. With a/a0 from 0.94 to 1.06, the energy bandgap shows a nonmonotonic behavior, which is due to the position change of conduction band minimum. The strength of conduction bands convergence can be enhanced by changing the relative position of conduction band extrema caused by compressive strain, which is in favor of the n-type ZTe. Calculated results show that compressive strain can also induce flat valence bands around the Γ point near the Fermi level, which can lead to a high Seebeck coefficient due to large effective masses, giving rise to better p-type ZTe values. The calculated elastic constants with a/a0 from 0.94 to 1.06 all satisfy the mechanical stability criteria, which proves that the PtSSe monolayer is mechanically stable in the considered strain range. Our works provide a new route to tune the electronic structures and transport coefficients of the Janus PtSSe monolayer by biaxial strain and can motivate related experimental studies.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 7
    Online Resource
    Online Resource
    Royal Society of Chemistry (RSC) ; 2022
    In:  Physical Chemistry Chemical Physics Vol. 24, No. 33 ( 2022), p. 19965-19974
    In: Physical Chemistry Chemical Physics, Royal Society of Chemistry (RSC), Vol. 24, No. 33 ( 2022), p. 19965-19974
    Abstract: The combination of piezoelectricity with a nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulators (PQSHI), is intriguing for exploring novel topological states toward the development of high-speed and dissipationless electronic devices. In this work, we predict a PQSHI Janus monolayer VCClBr constructed from VCCl 2 , which is dynamically, mechanically and thermally stable. In the absence of spin orbital coupling (SOC), VCClBr is a narrow gap semiconductor with a gap value of 57 meV, which is different from Dirac semimetal VCCl 2 . The gap of VCClBr is due to a built-in electric field caused by asymmetrical upper and lower atomic layers, which is further confirmed by the external-electric-field induced gap in VCCl 2 . When including SOC, the gap of VCClBr is increased to 76 meV, which is larger than the thermal energy of room temperature (25 meV). The VCClBr is a 2D topological insulator (TI), which is confirmed by Z 2 topological invariant and nontrivial one-dimensional edge states. It is proved that the nontrivial topological properties of VCClBr are robust against strain (biaxial and uniaxial cases) and external electric fields. Due to broken horizontal mirror symmetry, only an out-of-plane piezoelectric response can be observed, when a biaxial or uniaxial in-plane strain is applied. The predicted piezoelectric strain coefficients d 31 and d 32 are −0.425 pm V −1 and −0.219 pm V −1 , respectively, and they are higher than or compared with those of many 2D materials. Finally, Janus monolayer VCFBr and VCFCl (dynamically unstable) are also constructed, and they are still PQSHIs. Moreover, the d 31 and d 32 of VCFBr and VCFCl are higher than those of VCClBr, and the d 31 (absolute value) of VCFBr is larger than one. According to out-of-plane piezoelectric coefficients of VCXY (X ≠ Y = F, Cl and Br), CrX 1.5 Y 1.5 (X = F, Cl and Br; Y = I) and NiXY (X ≠ Y = Cl, Br and I), it is concluded that the size of the out-of-plane piezoelectric coefficient has a positive relation with the electronegativity difference of X and Y atoms. Our studies enrich the diversity of Janus 2D materials, and open a new avenue in the search for PQSHI with a large out-of-plane piezoelectric response, which provides a potential platform in nanoelectronics.
    Type of Medium: Online Resource
    ISSN: 1463-9076 , 1463-9084
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2022
    detail.hit.zdb_id: 1476244-4
    detail.hit.zdb_id: 1460656-2
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  • 8
    Online Resource
    Online Resource
    Royal Society of Chemistry (RSC) ; 2022
    In:  Physical Chemistry Chemical Physics Vol. 24, No. 2 ( 2022), p. 715-723
    In: Physical Chemistry Chemical Physics, Royal Society of Chemistry (RSC), Vol. 24, No. 2 ( 2022), p. 715-723
    Abstract: The valley degree of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize valley polarization. Here, we propose a model that the valley polarization transition at different valley points (− K and K points) is produced by biaxial strain. Using first-principles calculations, we illustrate our idea with a concrete example of a Janus GdClF monolayer. The predicted GdClF monolayer is dynamically, mechanically and thermally stable, and is a ferromagnetic (FM) semiconductor with perpendicular magnetic anisotropy (PMA), valence band maximum (VBM) at valley points and a high Curie temperature ( T C ). Due to its intrinsic ferromagnetism and spin–orbit coupling (SOC), a spontaneous valley polarization will be induced, but the valley splitting is only −3.1 meV, which provides an opportunity to achieve valley polarization transition at different valley points by strain. In the considered strain range ( a / a 0 : 0.94–1.06), the strained GdClF monolayer always has an energy bandgap, strong FM coupling and PMA. The compressive strain is in favour of − K valley polarization, while the tensile strain is favorable for K valley polarization. The corresponding valley splittings at 0.96 and 1.04 strains are −44.5 meV and 29.4 meV, respectively, which are higher than the thermal energy at room temperature (25 meV). Due to its special Janus structure, both in-plane and out-of-plane piezoelectric polarizations can be observed. It is found that the direction of in-plane piezoelectric polarization can be overturned by strain, and the d 11 values at 0.96 and 1.04 strains are −1.37 pm V −1 and 2.05 pm V −1 , respectively. Our work paves the way to design ferrovalley materials for application in multifunctional valleytronic and piezoelectric devices by strain.
    Type of Medium: Online Resource
    ISSN: 1463-9076 , 1463-9084
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2022
    detail.hit.zdb_id: 1476244-4
    detail.hit.zdb_id: 1460656-2
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  • 9
    Online Resource
    Online Resource
    American Physical Society (APS) ; 2023
    In:  Physical Review Materials Vol. 7, No. 4 ( 2023-4-14)
    In: Physical Review Materials, American Physical Society (APS), Vol. 7, No. 4 ( 2023-4-14)
    Type of Medium: Online Resource
    ISSN: 2475-9953
    Language: English
    Publisher: American Physical Society (APS)
    Publication Date: 2023
    detail.hit.zdb_id: 2898355-5
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  • 10
    Online Resource
    Online Resource
    Royal Society of Chemistry (RSC) ; 2023
    In:  Physical Chemistry Chemical Physics Vol. 25, No. 28 ( 2023), p. 18577-18583
    In: Physical Chemistry Chemical Physics, Royal Society of Chemistry (RSC), Vol. 25, No. 28 ( 2023), p. 18577-18583
    Abstract: Electronic correlation combined with spin–orbit coupling (SOC) may have a significant impact on the physical properties of two-dimensional (2D) transition metal magnetic compounds. Moreover, magnetic anisotropy (MA) is very important in determining magnetic, ferrovalley (FV) and topological properties of these 2D systems. Based on a density-functional theory (DFT) + U approach, it is found that the electronic correlation can induce topological phase transition in some special 2D valleytronic materials (for example FeCl 2 and VSi 2 P 4 ) with out-of-plane MA, and a novel valley-polarized quantum anomalous Hall insulator (VQAHI) and half-valley-metal (HVM) can be produced. These topological phase transitions are connected with a sign-reversible Berry curvature and band inversion between d xy /d x 2 − y 2 and d z 2 orbitals. However, for in-plane MA, the FV and nontrivial topological properties will be suppressed. For a given material, the correlation strength is fixed, but these novel electronic states and topological phase transitions can still be exhibited by strain in practice. The mini-review sheds light on the possible role of correlation effects in some special 2D valleytronic materials.
    Type of Medium: Online Resource
    ISSN: 1463-9076 , 1463-9084
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2023
    detail.hit.zdb_id: 1476244-4
    detail.hit.zdb_id: 1460656-2
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