In:
AIP Advances, AIP Publishing, Vol. 3, No. 7 ( 2013-07-01)
Abstract:
Electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte have been fabricated at room temperature. The effects of humidity on performances are investigated. At the relative humidity of 65 %, the measured capacitance is 10 μF/cm2, and the device shows Ion/off ratio of 8.93 × 107, field-effect mobility of 5.9 cm2/Vs. As relative humidity declines, the measured capacitance decreases, which gives rise to the degradation in performance. Especially, at the relative humidity of 0 %, the capacitance of 0.01 μF/cm2 is measured, so the device cannot be turned off. The reason may be that humidity can promote H2O molecules to permeate into solid electrolyte, which can cause charges accumulation.
Type of Medium:
Online Resource
ISSN:
2158-3226
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
2583909-3
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