In:
Microscopy and Microanalysis, Oxford University Press (OUP), Vol. 19, No. S5 ( 2013-08), p. 99-104
Abstract:
In this paper, we have observed an atomic-scale structure and compositional variation at the interface of the InGaN/GaN multi-quantum wells (MQW) by both scanning transmission electron microscopy (STEM) using high-angle annular dark-field mode and atom probe tomography (APT). The iso-concentration analysis of APT results revealed that the roughness of InGaN/GaN interface increased as the MQW layers were filled up, and that the upper interface of MQW (GaN/InGaN to the p -GaN side) was much rougher than that of the lower interface (InGaN/GaN tot he n -GaN side). On the basis of experimental results, it is suggested that the formation of interface roughness can affect the quantum efficiency of InGaN-based light-emitting diodes.
Type of Medium:
Online Resource
ISSN:
1431-9276
,
1435-8115
DOI:
10.1017/S1431927613012427
Language:
English
Publisher:
Oxford University Press (OUP)
Publication Date:
2013
detail.hit.zdb_id:
1481716-0
SSG:
11
SSG:
12
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