In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 8A ( 1996-08-01), p. L1009-
Abstract:
A high-density (10 11 cm -3 ) inductively coupled plasma at low pressure (0.1 Pa) of SiH 4 enables the growth of hydrogenated amorphous silicon films of high photoconductivity (10 -5 S/cm) at substrate temperatures ( 〈 100 °C) considerably lower than that with a conventional capacitive rf plasma. Such low-pressure high-power discharges were achieved by inserting a loop antenna into a plasma with magnetic multipole confinement. Thus, this type of rf reactor appears to be promising to realize high-speed deposition of large-area a-Si:H films at room temperature.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1009
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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