In:
Surface Review and Letters, World Scientific Pub Co Pte Ltd, Vol. 25, No. 03 ( 2018-04), p. 1850065-
Abstract:
Silicon carbon nitride (SiCN) films were prepared on silicon substrate by reactive magnetron sputtering of a sintered silicon carbide target in a mixture of argon, nitrogen and acetylene. Detailed studies including energy dispersive spectrometer, atomic force microscope, X-ray diffraction, Fourier transformed infrared spectrometry and [Formula: see text]–[Formula: see text] measuring instrument were performed. The as-deposited SiCN films do not exhibit obvious crystalline phase, and the SiCN films annealed at 600[Formula: see text]C show SiC crystal and graphite carbon. The SiCN films mainly consist of Si–N, Si–C, Si–O, C–C, C[Formula: see text] N, Si–H n and N–H n bonds, and increasing C 2 H 2 flow rate promotes the formation of C–C, N–H n and Si–N bonds. The SiCN film with low dielectric constant of 3.8 and compact structure was successfully prepared.
Type of Medium:
Online Resource
ISSN:
0218-625X
,
1793-6667
DOI:
10.1142/S0218625X18500658
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2018
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