In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
Abstract:
Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga 2 O 3 ) through the utilization of a so-called ammoniating process. Ga 2 O 3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm 2 using a mixture of Ga 2 O 3 , HCl, NH 4 OH and H 2 O for 2 h. Then, the deposited Ga 2 O 3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga 2 O 3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga 2 O 3 structure was detected, suggesting a complete transformation of Ga 2 O 3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga 2 O 3 to generate gaseous Ga 2 O increase with temperature. The growth mechanism for the transformation of Ga 2 O 3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga 2 O 3 . A significant change of morphological structures takes place after a complete transformation of Ga 2 O 3 to GaN where the original nanorod structures of Ga 2 O 3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.
Type of Medium:
Online Resource
ISSN:
1556-276X
DOI:
10.1186/1556-276X-9-685
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2014
detail.hit.zdb_id:
2253244-4
detail.hit.zdb_id:
3149496-1
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