In:
Applied Physics Letters, AIP Publishing, Vol. 110, No. 4 ( 2017-01-23)
Abstract:
In this work, we fabricated the In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a MOS interface of Y2O3/In0.53Ga0.47As and recessed gate structure. We investigated the interfacial properties of the gate stack and the junction characteristics of the fabricated MOSFETs. Low subthreshold slope (SS = 110 mV/dec), high on/off current ratio (Ion/Ioff = 106), and high effective mobility of 1600 cm2/V·s were achieved in the MOSFETs at a sheet charge density (Ns) = 1.2 × 1012 cm−2. From the temperature dependence of I–V characteristics, the interface trap density was extracted to be Dit = 2.2 × 1011 cm−2·eV−1 with a negligible trap-assisted leakage current.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2017
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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