In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 821-823 ( 2015-6), p. 51-55
Abstract:
High-quality 100 mm 4H-SiC boules were grown using the physical vapor transport (PVT) method with optimized growth parameters. Micro-Raman spectroscopy measurement shows that the 4H-SiC polytype of the entire wafer is uniform. The micropipe density is measured to be less than 1cm -2 . The 1c threading screw dislocation (TSD) density can be suppressed to the magnitude of 10 2 cm -2 . After chemical mechanical polishing (CMP), it is found that the warp of the substrate is less than 10 μm, and the surface roughness (Ra) is as low as 0.063 nm.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.821-823
DOI:
10.4028/www.scientific.net/MSF.821-823.51
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2015
detail.hit.zdb_id:
2047372-2
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