In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 6A ( 1995-06-01), p. L649-
Abstract:
Luminescence properties of anodically produced porous silicon (PS) have been improved significantly by depositing In metal into micropores. Thin ( ∼300 nm) PS specimens were electrochemically plated in an indium sulfate solution. Observed room-temperature photoluminescence (PL) is very strong in intensity and narrow in spectral width ( ≥0.22 eV). Furthermore, the photodarkening phenomenon, one of the problems of anodized PS, can be reduced for the In-plated PS, compared with as-anodized PS, while room-temperature PL decay times ( ∼10 -5 s) are slightly longer for the plated PS than those for as-anodized PS and anodically oxidized PS.
Possible reasons for the observed improvements are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L649
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
Permalink