In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12R ( 1992-12-01), p. 3812-
Abstract:
The X-ray diffraction measurements have revealed that the type B region, whose crystallographic orientation is rotated 180° about the surface normal with respect to the CaF 2 film (rotational twin), partially exists in a GaAs film on CaF 2 (111). It is found that the fraction of the type B region increases as the GaAs growth temperature increases for good crystallinity in GaAs films. A decrease in temperature at the initial stage of growth followed by an increase in temperature, i.e., the two-step growth method, is found to be very effective for suppressing the generation of the rotational twins at the GaAs/CaF 2 interface so as to grow high-quality GaAs on CaF 2 /Si(111).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.3812
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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