In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 6S ( 2010-06-01), p. 06GG01-
Abstract:
In this research, ambipolar behavior, which is one of graphene's unique characteristics, is studied for the epitaxial graphene formed on 3C-SiC grown on a Si substrate. The graphene channel is believed to be unintentionally p-type-doped at Dirac-point voltages of approximately +0.11 to +0.12 V. However, as drain voltage negatively increases, Dirac point voltage shifts. The drain current in the p-channel mode of operation saturates at a lower level than that in the n-channel mode of operation. These behaviors are caused by asymmetric carrier transport throughout channel-substrate heterojunctions (i.e., graphene, thin n-type SiC layer, and p-type Si substrate) and source/drain Schottky metal contacts. The interface between the p-type Si substrate and n-type SiC has a significant effect on transport in graphene channels. The results may be helpful for understanding transport in the device and for suppressing ambipolar operation, leading to a unipolar FET operation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.06GG01
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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