In:
Journal of Applied Physics, AIP Publishing, Vol. 73, No. 11 ( 1993-06-01), p. 7225-7228
Abstract:
We predict by theoretical calculation that the concentration of interstitial Li (Liint) in ZnSe can be decreased, i.e., the Li acceptor (LiZn) can be stabilized by above-band-gap photoirradiation. Creation of excess electrons by the irradiation increases the occupation probability of the Liint donor level and thus the concentration of neutral Liint (Liint0). Consequently, the LiZn concentration increases because of the reaction Liint0+VZn0→LiZn0, where VZn0 and LiZn0 are a neutral Zn vacancy and a neutral Li acceptor, respectively. The carrier injection through an electrical junction will have similar effects as the photoirradiation, and thus our results indicate that the Li acceptors tend to be stable in active regions of light-emitting diodes and laser diodes.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1993
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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