In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3S ( 2001-03-01), p. 1911-
Abstract:
Very thin Nylon 11 films (≤20 nm in thickness) containing Au or Ge nanoparticles (Au/Nylon 11 or Ge/Nylon 11) were prepared by a thermal relaxation technique, and current–voltage ( I – V ) characteristics in the vertical direction of the films were studied. In the case of Au/Nylon 11, the plan and cross-sectional transmission electron microscopic (TEM) images revealed that Au nanocrystals are spontaneously aligned in the middle of the upper and lower electrodes and Nylon 11 tunneling barriers are formed between Au nanocrystals and electrodes. In the case of Ge/Nylon 11, lattice fringes corresponding to Ge crystals with the diamond structure were not observed in TEM images, suggesting that amorphous Ge particles are dispersed in Nylon 11 films. Clear Coulomb staircases were observed in the I – V characteristics in both cases.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.1911
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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