In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12S ( 1996-12-01), p. 6623-
Abstract:
Pt emitters were deposited using electron-beam-induced reaction on overetched Si emitters fabricated by a conventional dry etching process. An emission current of 10 µA was obtained from a 100-tip field emitter array (FEA) at an extraction voltage of 100 V. A prototype of a nanometer-sized field emitter was fabricated using focused ion beam (FIB) etching and electron-beam-induced deposition (EBID).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.6623
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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