In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 770 ( 2003)
Kurzfassung:
Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiO x films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k -edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.
Materialart:
Online-Ressource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-770-I1.3
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2003
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