In:
Journal of Applied Physics, AIP Publishing, Vol. 68, No. 11 ( 1990-12-01), p. 5810-5813
Abstract:
Nondestructive characterization of a large variety of silicon-on-insulator structures has been performed by infrared spectroscopic ellipsometry (IRSE). This technique is shown to be applicable over very wide ranges of Si and SiO2 thicknesses and thus is more adapted than visible reflectometry or spectroscopic ellipsometry when relatively thick films are analyzed. In addition, IRSE provides information on any possible interface roughness and thickness homogeneity of the layers.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1990
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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