In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8R ( 1997-08-01), p. 5151-
Abstract:
β-SiC photodiodes were fabricated on Si substrates by rapid thermal chemical vapor deposition (RTCVD). Experimental results show that the developed photodiodes have a peak photoresponsivity at 575 nm which corresponds to the visible light between yellow and green. These photodiodes display a low dark current of about 10 nA and 5 µ A at reverse biases of 1 V and 10 V, respectively, and have an optical gain of about 97 under an incident light power of 5 µ W and a reverse bias of 14.5 V. Dark-current levels versus reverse bias have also been measured as a function of temperature, and the results indicate that these diodes can operate at elevated temperatures above 200° C. Thus β-SiC is a candidate for optoelectronic devices on Si substrates in applications, where low cost, silicon compatibility, and high-temperature operation are the prime considerations.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.5151
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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