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  • 1
    Online Resource
    Online Resource
    Amorphous Carbon Thin Films Deposited by Thermal CVD Using Camphoric Carbon as Precursor
    Trans Tech Publications, Ltd. ; 2011
    In:  Advanced Materials Research Vol. 403-408 ( 2011-11), p. 646-650
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 403-408 ( 2011-11), p. 646-650
    Abstract: This paper reports on the deposition of semiconducting amorphous carbon (p-aC) films fabricated onto the glass substrate and n-type silicon by Thermal Chemical Vapor Deposition (CVD) using natural source of camphoric carbon as the precursor material. Those samples were deposited at 5 different temperatures from 3500C to 5500C. From the characterization of the electrical properties using current-voltage (I-V) measurement, I-V graph was modeled for both conditions, where for a-C thin films linear graph (ohmic) were performed, whereas for the device, a rectifying graph were obtained. The analyze revealed that conductivity shows an increment as deposition temperature increased, both in dark and under illumination condition. On the other hand, the solar cell device of the p-aC/n-Si achieved an efficiency of 0.1111% for the a-C deposited at 3500C. Other than that, optical properties were also characterized by using UV-VIS-NIR system. The same trend of optical and electrical can be seen when the measurement from the Tauc’s plot expose a decreasing value of optical band gap as temperature increase.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.403-408
    DOI: 10.4028/www.scientific.net/AMR.403-408.646
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2011
    detail.hit.zdb_id: 2265002-7
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  • 2
    Online Resource
    Online Resource
    Raman and Electrical Analysis of Iodine-Doped Amorphous Carbon Thin Films
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 667 ( 2013-3), p. 281-286
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 667 ( 2013-3), p. 281-286
    Abstract: Iodine doped amorphous carbon (a-C: I) thin films were prepared by using Thermal Chemical Vapor Deposition (CVD) with deposition temperature ranging from 5000C to 7000C. The physical and electrical properties of deposited a-C:I thin films were characterized by Raman spectroscope and Solar Simulator system. The presence of 2 peaks known as Raman D peaks and Raman G peaks ensure the amorphous structure of carbon (C). As deposition temperature increase, the ID/IG ratio shows difference value, which indicates the effects of the temperature towards the a-C: I structures. An ohmic graph was obtained for the IV measurement, and the conductivity varies from 10-4 to 101 Scm-1. The photoresponse was also determined for all samples. As a reference, an undoped a-C thin film was prepared to differentiate the characteristic between a-C and a-C: I.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.667
    DOI: 10.4028/www.scientific.net/AMR.667.281
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
    detail.hit.zdb_id: 2265002-7
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  • 3
    Online Resource
    Online Resource
    The Effect of Camphor Oil Amounts on the Properties of Amorphous Carbon Thin Films by Thermal Chemical Vapor Deposition
    Trans Tech Publications, Ltd. ; 2012
    In:  Advanced Materials Research Vol. 576 ( 2012-10), p. 611-614
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 576 ( 2012-10), p. 611-614
    Abstract: Amorphous carbon thin films have been deposited by a simple Thermal Chemical Vapor Deposition (CVD) with varying the amount of natural precursor (camphor oil) onto the glass substrates. In this work, we have investigated the effect of different amount of camphor oil on the evolution of electrical conductivity and the optical and structural properties of amorphous carbon thin films. The amorphous carbon thin films were characterized by using current-voltage (I-V) measurement, UV-VIS-NIR spectroscopy and Raman spectroscopy. The current-voltage (I-V) study reveals that the highest electrical conductivity was deposited at 3 ml camphor oil. The optical band gap is almost unchanged with the increase of camphor oil amount. Raman result indicates that amorphous carbon thin films consists a mixture of sp2 and sp3 bonded carbon atoms.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.576
    DOI: 10.4028/www.scientific.net/AMR.576.611
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2012
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  • 4
    Online Resource
    Online Resource
    Influence of Iodine Doping on the Properties of Amorphous Carbon Thin Films Deposited from Camphoric Carbon Precursor
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 832 ( 2013-11), p. 449-454
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 832 ( 2013-11), p. 449-454
    Abstract: odine incorporation to amorphous carbon (a-C) thin films offers many advantages and a full understanding of the properties of iodine doped amorphous carbon (a-C:I) thin films which is necessary for applications like optoelectronics devices and photovoltaic solar cells. Iodine doped amorphous carbon thin films have been doped by thermal chemical vapour deposition (CVD) technique at different amount of iodine. The effects of iodine amount on the properties of a-C:I thin films have been investigated using standard measurement techniques and discussed. FESEM studies have been performed on the doped films for the surface morphology studies. Raman studies have been carried out on the doped samples for the chemical bonding of carbon atoms. The sp 2 and sp 3 contents have found to be dependent on the amount of iodine. For evaluation of the electrical and optical properties of the doped films, the current-voltage (I-V) measurement and UV-Vis-NIR spectroscopy have been performed on the a-C:I thin films. It has been observed that the a-C:I thin films doped with 1g has higher electrical conductivity and lowest optical band gap.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.832
    DOI: 10.4028/www.scientific.net/AMR.832.449
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
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  • 5
    Online Resource
    Online Resource
    Carbon-Based Solar Cell from Amorphous Carbon with Nitrogen Incorporation
    Trans Tech Publications, Ltd. ; 2012
    In:  Advanced Materials Research Vol. 576 ( 2012-10), p. 785-788
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 576 ( 2012-10), p. 785-788
    Abstract: Nitrogen doped amorphous carbon (n-C:N) solar cells were successfully prepared using a simple and low cost Chemical Vapor Deposition (CVD) method using camphor oil as a precursor. Four samples of n-C:N were deposited by varying the deposition temperature (500oC, 550oC, 600oC, 650oC). The fabricated solar cell using n-C:N with the configuration of Au/n-C:N/p-Si/Au achieved an increasing efficiency as temperature increase (0.000202% to 0.001089%). As a reference, pure a-C was deposited at 500oC and exhibit 0.000048% efficiency. The current-voltage (I-V) graph emphasized on the linear graph (ohmic) for the a-C thin films, whereas for the p-n device structure, a rectifying curve was obtained. Electrical conductitivity possesses increasing value (1.69 x 10-2 to 22 Ω-1 cm-1) due to increasing sp2 ratio in a-C as temperature increase. The rectifying curves signify the heterojunction between the n-doped a-C film and the p-Si substrate and designate the generation of electron-hole pair of the samples under illumination. Photoresponse characteristics of the deposited a-C was highlighted when being illuminated (AM 1.5 illumination: 100 mW/cm2, 25oC) and optical band gap for the nitrogen doped a-C is reported from 0.75 eV to 0.25 eV as temperature increase.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.576
    DOI: 10.4028/www.scientific.net/AMR.576.785
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2012
    detail.hit.zdb_id: 2265002-7
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  • 6
    Online Resource
    Online Resource
    Iodine Doping of Amorphous Carbon Thin Films Deposited by Thermal CVD
    Trans Tech Publications, Ltd. ; 2012
    In:  Advanced Materials Research Vol. 626 ( 2012-12), p. 834-838
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 626 ( 2012-12), p. 834-838
    Abstract: A simple thermal chemical vapor deposition method is employed for the deposition of amorphous carbon thin films by natural precursor camphor oil onto the glass substrates and the iodine doping process. In this work, we have studied the effect of iodine doping on the evolution of electrical properties and the optical and structural properties of amorphous carbon thin films. The amorphous carbon thin films were characterized by using Raman spectroscopy, UV-VIS-NIR spectroscopy, current-voltage (I-V) measurement, Fourier transform infrared (FTIR) and FESEM. The I-V study reveals that the electrical conductivity was increased with the iodine doping. The iodine doped thin films induced graphitization by decreasing the optical band gap. Raman and FTIR result indicates that amorphous carbon thin films consist of a mixture of sp 2 and sp 3 bonded carbon atoms. The FESEM shows the amorphous nature of the thin films.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.626
    DOI: 10.4028/www.scientific.net/AMR.626.834
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2012
    detail.hit.zdb_id: 2265002-7
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  • 7
    Online Resource
    Online Resource
    Effect of Gas Flow Rate on the Properties of Amorphous Carbon Thin Films Prepared by Thermal CVD Using Camphoric Carbon Precursor
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 832 ( 2013-11), p. 423-428
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 832 ( 2013-11), p. 423-428
    Abstract: Amorphous carbon (a-C) thin films have been prepared by a simple thermal CVD using camphor oil as precursor. The effects of argon gas flow rate on electrical, optical and structural properties of a-C thin films have been investigated. The a-C thin films were characterized by using current-voltage (I-V) measurement, UV-Vis-NIR spectroscopy, Raman and FTIR spectroscopy. The I-V study reveals that the electrical conductivity was increased with increasing argon gas flow rate. It was found that the optical band gap decreased from 0.88 to 0.42 eV as gas flow rate increased which indicates a microstructural disorder at different gas flow rate. Raman and FTIR studies reveal the amorphous structures which consist of a mixture of sp 2 and sp 3 bonded carbon atoms.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.832
    DOI: 10.4028/www.scientific.net/AMR.832.423
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
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  • 8
    Online Resource
    Online Resource
    Nitrogen Doping of Amorphous Carbon by Aerosol-Assisted Chemical Vapor Deposition for Carbon-Based Solar Cell Applications
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 832 ( 2013-11), p. 706-711
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 832 ( 2013-11), p. 706-711
    Abstract: A novel self-prepared Aerosol-Assisted Chemical Vapor Deposition (AACVD) system was developed to deposit the amorphous carbon (a-C) thin films for the carbon-based solar cell applications. The nitrogen doping was applied towards the a-C thin films at deposition temperature of 600°C and 650°C. The samples gave the photoresponse characteristic for the electrical measurement by using the solar simulator system in under illumination condition. FESEM images signify the nanostructured sized a-C:N ( 〈 100nm) and EDX spectrum clarify the presence of N content in the N doped a-C. Solar cell efficiency was also obtained with the value of 0.001648% for 650°C and 0.000124% for 600°C when the a-C:N were deposited on p-Si substrate. The presence of the rectifying curves at the a-C:N/p-Si junction indicates the hetero-junction behavior between the p-n structure and thus proves the successful doping of N doped a-C using the AACVD technique.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.832
    DOI: 10.4028/www.scientific.net/AMR.832.706
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
    detail.hit.zdb_id: 2265002-7
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  • 9
    Online Resource
    Online Resource
    Fabrication and Characterization of Camphor-based Amorphous Carbon Thin Films
    Elsevier BV ; 2013
    In:  Procedia Engineering Vol. 56 ( 2013), p. 743-749
    Details
    In: Procedia Engineering, Elsevier BV, Vol. 56 ( 2013), p. 743-749
    Type of Medium: Online Resource
    ISSN: 1877-7058
    URL: Article
    DOI: 10.1016/j.proeng.2013.03.188
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2013
    detail.hit.zdb_id: 2509658-8
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  • 10
    Online Resource
    Online Resource
    Properties of Iodine Doped Amorphous Carbon Thin Films Grown by Thermal CVD
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 667 ( 2013-3), p. 294-299
    Details
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 667 ( 2013-3), p. 294-299
    Abstract: Thin film of undoped and doped amorphous carbon has been achieved using the simple thermal CVD system in an ambient gas of Ar and Ar with I2, respectively. The electrical and optical properties of the iodine doped amorphous carbon (a-C:I) thin films were studied. The incorporation of iodine into the amorphous carbon thin film results in increase of electrical conductivity as doping temperature increase up to 400°C, which indicates that doping effect of iodine. Heterojuction is confirmed by rectifying current-voltage characteristics of a-C:I/n-Si junction. The decreasing of optical band gap from 0.54 to 0.25 eV after iodine doping was determined which contribute to induce graphitization in the films. Raman result indicates that sp2 and sp3 bonded carbon atoms were dominated in the both with and without iodine doped thin films.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    URL: Article
    DOI: 10.4028/www.scientific.net/AMR.667
    DOI: 10.4028/www.scientific.net/AMR.667.294
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
    detail.hit.zdb_id: 2265002-7
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