In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 11S ( 2013-11-01), p. 11NG02-
Abstract:
GaN-based light-emitting diodes (LEDs) were fabricated on nano patterned sapphire substrates (nano-PSSs) by nanoimprint (NIP) lithography. A nano-PSS with a pillar height of more than 600 nm was achieved. The surface emission of the LEDs was strongly affected by pillar height, and the surface emission intensity was highest at a pillar height of 250 nm. In contrast, the external quantum efficiency of the LEDs on the nano-PSSs with diameters of 100 and 450 nm was approximately 30% higher than that on a flat sapphire substrate, which is similar to that on a conventional PSS.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.11NG02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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