In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 1A ( 2001-01-01), p. L59-
Abstract:
In this Letter, we describe a new approach for the direct bonding of the epitaxial GaAs film on a Si substrate, namely, a thick GaAs/Si film grown by molecular-beam epitaxy (MBE) is transplanted onto another Si substrate on which a thin GaAs film has been grown, by heating for 1 h at 700°C. A reflection high-energy electron diffraction (RHEED) measurement from such a transplanted film indicates its single-crystalline nature. The double-crystal X-ray diffraction shows a full-width at half maximum (FWHM) of 481 arcsec in the case of the as-transplanted sample and decreases to 254 arcsec when followed by thermal cycle annealing (TCA) repeated five times. Compared to the non transplanted film, the transplanted film exhibits very good photoluminescence properties with very weak deep-level emission.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink