In:
Proceedings, annual meeting, Electron Microscopy Society of America, Cambridge University Press (CUP), Vol. 52 ( 1994), p. 1034-1035
Abstract:
Users of the Hitachi S-900 field emission SEM attempting to do high resolution topographical studies of cell surfaces (or macromolecular assemblies) and correlative localization of colloidal gold probes are handicapped by imaging conditions related to contamination or radiation damage of the specimen surface since secondary (SE) and backscatter (BS) electron imaging must be done consecutively. We have developed a digitial acquisition system for the S-900 FESEM using an analog/digital conversion board on the VME bus of a Silicon Graphics IRIS, using the conventional and graphics memory for image storage, rather than using a frame grabber with its internal A/D and frame memory. A DT-1492-G board from Data Translation with a 250 kHz throughput was used for the 12-bit A/D circuitry. We collect data at 12-bit resolution, and use the frame buffer memory on the IRIS for separately converting, and then displaying as 8-bit (greyscale, 256 levels) SE and BS electron images.
Type of Medium:
Online Resource
ISSN:
0424-8201
,
2690-1315
DOI:
10.1017/S0424820100172905
Language:
English
Publisher:
Cambridge University Press (CUP)
Publication Date:
1994
SSG:
11
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