In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 8 ( 2022), p. 088102-
Abstract:
Diamond has a wide band gap, high carrier mobility, and high thermal conductivity, thereby possessing great potential applications in high power, and high temperature electronics devices, and also inhigh temperature logic circuit. In this work, we fabricate a hydrogen terminated diamond metal-oxide-semiconductor field effect transistor (MOSFET) by using the atomic layer deposition grown Al〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 as a gate dielectric and passivation layer. The device has a gate length and width of 4 μm and 50 μm, respectively. The device delivers a maximum output current of about 113.4 mA/mm at 〈i〉V〈/i〉〈sub〉GS〈/sub〉 of –6 V and an ultra-high on/off ratio of 10〈sup〉9〈/sup〉. In addition, we fabricate three resistors, respectively, with an interelectrode distance of 20, 80 and 160 μm, corresponding to the resistance value of 16.7, 69.5 and 136.4 kΩ, respectively. The logic inverter is realized by combining the MOSFET with the load resistance, and the characteristics of the logic inverter are demonstrated successfully, which indicates that the diamond MOSFET has great potential applications in future logic circuits.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.71.20211447
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2022
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