In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 14, No. 1 ( 1996-01-01), p. 240-244
Abstract:
Both 100 and 200 keV Xe ions were implanted into silicon nitride (Si3N4) films and 600, 800, and 1000 keV Xe ions were implanted into hydrated silicon nitride (Si1N1.375H0.603) films at different angles. In order to determine the lateral spread of Xe ions implanted in Si3N4 and Si1N1.375H0.635 at room temperature, both normal and oblique incidence Rutherford backscattering were used. The results show that marked improvements in the measurement sensitivity to lateral spread is obtained by oblique incidence Rutherford backscattering. The lateral spread obtained agrees with the TRIM’92 prediction within experimental error for the 100–200 keV Xe+ implanted into the Si3N4 films, but a significant deviation of the lateral spread from the calculated value is observed for 600, 800, and 1000 keV Xe+ implanted into Si1N1.375H0.603 film.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1996
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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