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  • 1
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 21 ( 2022), p. 217302-
    Abstract: Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional transition metal sulfides have unique electronic structure and properties, and they are widely used in electronic devices, energy conversions, memories and other fields. In this work, a two-dimensional ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor is prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10〈sup〉1〈/sup〉 to 10〈sup〉5〈/sup〉. Then, the resistance and on/off ratio of the memtransistor can be controlled by changing the light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in a range of 10〈sup〉2〈/sup〉–10〈sup〉5〈/sup〉 by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9 × 10〈sup〉4〈/sup〉 s, the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor still maintains a switch ratio close to 10〈sup〉4〈/sup〉, indicating the good stability and durability of the device. It demonstrates that the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 memtransistor will be one of potential candidates for the next- generation nonvolatile memory applications.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2022
    Location Call Number Limitation Availability
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  • 2
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 70, No. 21 ( 2021), p. 217302-
    Abstract: Memtransistor is a new multi-terminal device which combines the properties of memristor and field effect transistor and simultaneously realizes information storage and processing. In this paper, the multilayer MoS〈sub〉2〈/sub〉 is prepared by micromechanical exploration method, then the back gate MoS〈sub〉2〈/sub〉 memtransistor with field effect transistor structure is fabricated, and the resistive switching characteristics and mechanism of the device under electric field, light field and their synergistic regulation are systematically studied. The experimental results show that the multilayer MoS〈sub〉2〈/sub〉 memtransistor has excellent bipolar resistance behavior and good cycle durability. Under the control of gate voltage, the switching ratio of the device can be tuned in a range of 10〈sup〉0〈/sup〉-10〈sup〉5〈/sup〉, up to 1.56 × 10〈sup〉5〈/sup〉, which indicates that the device has a strong gating effect. Under the control of light illumination, the resistance characteristics of the device are strongly dependent on the incident wavelength. When photoelectric synergistic regulation is performed, the device displays excellent four-terminal control capability, and the switching ratio is enhanced up to 4.8 × 10〈sup〉4〈/sup〉. The mechanism of resistive switching characteristics can be attributed to the changes of charge capture state and Schottky barrier height at the interface between MoS〈sub〉2〈/sub〉 and metal electrodes, and the continuous photoconductance effect caused by photogenerated carriers in MoS〈sub〉2〈/sub〉 channel.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2021
    Location Call Number Limitation Availability
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  • 3
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 0, No. 0 ( 2022), p. 0-
    Abstract: Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional Transition Metal Sulfides(TDMS)have unique electronic structure and properties, and they are widely used in electronic devices, energy conversion, memory and other fields. In this paper, a two-dimensional ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor was prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10〈sup〉1〈/sup〉 ~ 10〈sup〉5〈/sup〉. Then, the multi-level resistance and on/off ratio of the memtransistor can be controlled by the change of light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in the range of 10〈sup〉2〈/sup〉 ~ 10〈sup〉5〈/sup〉 by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9×10〈sup〉4〈/sup〉 s, the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor still maintains a switch ratio close to 10〈sup〉4〈/sup〉, indicating the good stability and durability of the device. It demonstrates that the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 memtransistor will be one of potential candidates for the next generation nonvolatile memory applications.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2022
    Location Call Number Limitation Availability
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  • 4
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 68, No. 1 ( 2019), p. 018401-
    Abstract: In recent years, the solution-processed organic-inorganic perovskite solar cells have attracted considerable attention because of their advantages of high energy conversion efficiency, low cost, and easily processing. Organometallic halide perovskite solar cells have gradually demonstrated particular superior properties in energy field due to their excellent photoelectric properties. This has been triggered by the unprecedented increase in its overall power conversion efficiency reaching 23% in just a few years, and it is becoming a direct competitor against the existing leading technology silicon. In this paper, 5-AVA-doped organometal halide perovskite films, (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉 and (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉/Spiro-OMeTAD, are prepared by the two-step method. The generation and recombination mechanism of charge carriers in two kinds of film samples are discussed in detail. The bivalent band structure of perovskite film material CH〈sub〉3〈/sub〉NH〈sub〉3〈/sub〉PbI〈sub〉3〈/sub〉 is determined by ultraviolet-visible absorption spectra of perovskite film (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉 and (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉/Spiro-OMeTAD. We investigate the photocarrier dynamics and band filling effects in these two organometal halide perovskite films by using femtosecond transient absorption spectroscopy. For (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉, the photoinduced bleach recovery at 760 nm reveals that band-edge recombination follows second-order kinetics, indicating that the dominant relaxation pathway is via the recombination of free electrons and holes. With regard to the perovskite film (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉 and (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉/Spiro-OMeTAD, the signal is photoinduced absorption from 550 nm to 700 nm. As the delay time increases, the electrons and holes are recombined, which results in a red shift of absorption spectrum in (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉. This can be referred to as Moss-Burstein band filling model. In contrast, the electrons and holes of (5-AVA)〈sub〉0.05〈/sub〉(MA)〈sub〉0.95〈/sub〉PbI〈sub〉3〈/sub〉/Spiro-OMeTAD perovskite film sample are separated after photoexcitation. The holes rapidly transfer to the hole transport layer of Spiro-OMeTAD. It will lead to an increase in sample absorbance and a rapid recovery of bleaching signals. Consequently, electron-hole recombination is no longer a dominant pathway to the relaxation of photocarriers and the band filling effect is not significant in the composite film. Our findings provide a valuable insight into the understanding of the charge carrier dynamics and spectral band filling in mixed perovskites. These results conduce to the understanding of the intrinsic photo-physics of semiconducting organometal halide perovskites with direct implications for photovoltaic and optoelectronic applications, and provide a reference for the future research of perovskite solar cells.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2019
    Location Call Number Limitation Availability
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