In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 687 ( 2011-6), p. 771-777
Abstract:
ITO films with different oxygen-argon ratios varies from 0 % to 8 % for Al 2 O 3 buffer layer have been fabricated by magnetron sputtering on soft PET substrate. The microstructure, resistivity, transmittance in visible light range and infrared emissivity were measured by XRD, four-point probe technology, UV-Vis spectrophotometer and Fourier Transform Infrared Spectroscopy (FTIR) as a function of different oxygen-argon ratios of Al 2 O 3 buffer layers, respectively. It can be found that the (222) plane crystallization improves with the increase of O/Ar ratio, (622) peak under 2% O/Ar ratio and (440), (211) peaks under 8% O/Ar ratio appear, respectively. The resistivity is also influenced significantly by the O/Ar ratio, though the variation of resistivity is not sensitive to O/Ar ratio higher than 2%. The results reveal that the best ITO film performance under the oxygen-argon ratio 2% for Al 2 O 3 buffer layer. It is also found that surface roughness and interface state play an important role in the variation of transmittance and emissivity. The emissivity of all the ITO films deposited on Al 2 O 3 buffer layer is dominated by both sheet resistance and surface morphology.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.687
DOI:
10.4028/www.scientific.net/MSF.687.771
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2011
detail.hit.zdb_id:
2047372-2
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