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  • 1
    Online Resource
    Online Resource
    Ovid Technologies (Wolters Kluwer Health) ; 2009
    In:  Otology & Neurotology Vol. 30, No. 1 ( 2009-01), p. 76-78
    In: Otology & Neurotology, Ovid Technologies (Wolters Kluwer Health), Vol. 30, No. 1 ( 2009-01), p. 76-78
    Type of Medium: Online Resource
    ISSN: 1531-7129
    Language: English
    Publisher: Ovid Technologies (Wolters Kluwer Health)
    Publication Date: 2009
    detail.hit.zdb_id: 2058738-7
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  • 2
    In: Journal of Catalysis, Elsevier BV, Vol. 360 ( 2018-04), p. 81-88
    Type of Medium: Online Resource
    ISSN: 0021-9517
    RVK:
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2018
    detail.hit.zdb_id: 1468993-5
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  • 3
    In: Otology & Neurotology, Ovid Technologies (Wolters Kluwer Health), Vol. 31, No. 9 ( 2010-12), p. 1365-1368
    Type of Medium: Online Resource
    ISSN: 1531-7129
    Language: English
    Publisher: Ovid Technologies (Wolters Kluwer Health)
    Publication Date: 2010
    detail.hit.zdb_id: 2058738-7
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  • 4
    Online Resource
    Online Resource
    Royal Society of Chemistry (RSC) ; 2023
    In:  Dalton Transactions Vol. 52, No. 21 ( 2023), p. 7302-7310
    In: Dalton Transactions, Royal Society of Chemistry (RSC), Vol. 52, No. 21 ( 2023), p. 7302-7310
    Abstract: Metallic lithium (Li) is considered as one of the highly interesting anode materials for advanced batteries due to its large theoretical capacity, small material density and the high cell voltages that can be obtained in batteries using Li anodes. However, Li dendrite growth and unstable solid electrolyte interphase (SEI) formation emerged during the plating–stripping process, leading to low coulombic efficiency, rapid battery degradation and serious safety issues. These disadvantages form the major challenges towards commercialization. In this work, an ultra-thin and uniform Y 2 O 3 layer is coated on Li metal anodes by atomic layer deposition (ALD) for improving the stability of Li metal batteries. Elucidation by in vacuo X-ray photoelectron spectroscopy (XPS) revealed different growth of a Y 2 O 3 layer on metallic Li compared to that on a silicon wafer, which is traditionally used for ALD processes. The Y-precursor, i.e. , Y(EtCp) 2 (iPr-amd), firstly reacts with metallic Li and forms a “decomposition” layer, leading to nonlinear growth at the preliminary stage (up to around 20 ALD cycles). Only after the bare Li surface has been fully covered does standard ALD growth start. The ALD Y 2 O 3 layer on metallic Li is able to effectively prevent the growth of Li dendrites, giving rise to an even plating–stripping process in symmetric Li metal cells with more stable performance and prolonged lifespan. Improved electrochemical performance through the Y 2 O 3 protective layer has also been investigated in Y 2 O 3 -coated Li||LiMn 2 O 4 asymmetrical full cells. This work indicates that ALD Y 2 O 3 coating is an attractive method to stabilize Li metal anodes for battery devices.
    Type of Medium: Online Resource
    ISSN: 1477-9226 , 1477-9234
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2023
    detail.hit.zdb_id: 1472887-4
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2019
    In:  Applied Physics Reviews Vol. 6, No. 2 ( 2019-06-01)
    In: Applied Physics Reviews, AIP Publishing, Vol. 6, No. 2 ( 2019-06-01)
    Abstract: Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous reactants and an exposed solid surface to deposit highly conformal coatings with a thickness controlled at the submonolayer level. These advantages have rendered ALD a mainstream technique in microelectronics and have triggered growing interest in ALD for a variety of nanotechnology applications, including energy technologies. Often, the choice for ALD is related to the need for a conformal coating on a 3D nanostructured surface, making the conformality of ALD processes a key factor in actual applications. In this work, we aim to review the current status of knowledge about the conformality of ALD processes. We describe the basic concepts related to the conformality of ALD, including an overview of relevant gas transport regimes, definitions of exposure and sticking probability, and a distinction between different ALD growth types observed in high aspect ratio structures. In addition, aiming for a more standardized and direct comparison of reported results concerning the conformality of ALD processes, we propose a new concept, Equivalent Aspect Ratio (EAR), to describe 3D substrates and introduce standard ways to express thin film conformality. Other than the conventional aspect ratio, the EAR provides a measure for the ease of coatability by referring to a cylindrical hole as the reference structure. The different types of high aspect ratio structures and characterization approaches that have been used for quantifying the conformality of ALD processes are reviewed. The published experimental data on the conformality of thermal, plasma-enhanced, and ozone-based ALD processes are tabulated and discussed. Besides discussing the experimental results of conformality of ALD, we will also give an overview of the reported models for simulating the conformality of ALD. The different classes of models are discussed with special attention for the key assumptions typically used in the different modelling approaches. The influence of certain assumptions on simulated deposition thickness profiles is illustrated and discussed with the aim of shedding light on how deposition thickness profiles can provide insights into factors governing the surface chemistry of ALD processes. We hope that this review can serve as a starting point and reference work for new and expert researchers interested in the conformality of ALD and, at the same time, will trigger new research to further improve our understanding of this famous characteristic of ALD processes.
    Type of Medium: Online Resource
    ISSN: 1931-9401
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2265524-4
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  • 6
    Online Resource
    Online Resource
    SAGE Publications ; 2009
    In:  Annals of Otology, Rhinology & Laryngology Vol. 118, No. 10 ( 2009-10), p. 693-697
    In: Annals of Otology, Rhinology & Laryngology, SAGE Publications, Vol. 118, No. 10 ( 2009-10), p. 693-697
    Abstract: We evaluated 5 patients who were changed over from a Baha Cordelle to a cochlear implant (CI). Moreover, the level of phoneme score was determined at which a Baha Cordelle user was better helped with a CI. Methods: We offer descriptive case reports and a retrospective evaluation of speech recognition in Baha Cordelle users and CI users. Results: In the CI users with noncompromised cochleas, the 10th percentile of the aided phoneme score in quiet at 65 dB sound pressure level (PS65) was 42%. We consider this PS65 as the cutoff level for switching from a Baha Cordelle to a CI. When patients with mixed hearing loss were using the Baha Cordelle, the PS65 of 42% was obtained at a mean sensorineural hearing loss component of about 70 dB hearing level (HL). This 70–dB HL component was used to consider Baha Cordelle users for cochlear implantation. The results of the 5 patients support these transition criteria. Conclusions: A CI is a valuable option in patients with mixed hearing loss when the sensorineural hearing loss component exceeds 70 dB HL or when the PS65 with a Baha Cordelle is less than about 40%. In such patients, the implantation procedure should be individualized on the basis of the clinical findings in the middle ear and mastoid cavity.
    Type of Medium: Online Resource
    ISSN: 0003-4894 , 1943-572X
    Language: English
    Publisher: SAGE Publications
    Publication Date: 2009
    detail.hit.zdb_id: 2033055-8
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  • 7
    Online Resource
    Online Resource
    Ovid Technologies (Wolters Kluwer Health) ; 2012
    In:  Otology & Neurotology Vol. 33, No. 3 ( 2012-04), p. 297-301
    In: Otology & Neurotology, Ovid Technologies (Wolters Kluwer Health), Vol. 33, No. 3 ( 2012-04), p. 297-301
    Type of Medium: Online Resource
    ISSN: 1531-7129
    Language: English
    Publisher: Ovid Technologies (Wolters Kluwer Health)
    Publication Date: 2012
    detail.hit.zdb_id: 2058738-7
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  • 8
    In: The Laryngoscope, Wiley, Vol. 118, No. 9 ( 2008-09), p. 1645-1649
    Abstract: Objectives/Hypothesis: To define audiological application criteria for different implantable hearing aid devices. Study Design: Retrospective study. Methods: Comparisons were made between aided speech recognition scores obtained at conversational level (65 dB) in patients with the Vibrant Soundbridge (VSB) (n = 22), the Otologics middle ear transducer (MET) (n = 10), conventional hearing aids (behind‐the‐ears) (n = 47), and cochlear implants (CIs) (n = 123). Results: In relation to hearing loss, only for mild hearing loss, speech recognition scores with VSB were comparable to that with conventional hearing aids. In the Otologics MET users, speech recognition scores were comparable with those of the conventional hearing aid users until a mean hearing loss of about 75 dB HL. At a sensorineural hearing loss of about 65 dB HL or more, the Otologics MET users have better speech recognition scores than the VSB users. For comparison with CI users, we followed a more conservative approach. In 90% of the users of a CI, speech recognition scores were better than those in: 1) patients with a conventional hearing aid and a mean hearing loss of about 95 dB HL or worse; 2) patients with an Otologics MET and a mean hearing loss of 85 dB HL or worse. Conclusions: Patients fitted with a VSB or an Otologics MET middle ear implant do not demonstrate better speech recognition scores than patients fitted with today's conventional hearing aids. Results might even been worse. However, the VSB and Otologics MET are a good option in patients with moderate (VSB) to severe (Otologics MET) sensorineural hearing loss and external otitis.
    Type of Medium: Online Resource
    ISSN: 0023-852X , 1531-4995
    Language: English
    Publisher: Wiley
    Publication Date: 2008
    detail.hit.zdb_id: 2026089-1
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  • 9
    Online Resource
    Online Resource
    American Vacuum Society ; 2019
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 37, No. 6 ( 2019-11-01)
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 37, No. 6 ( 2019-11-01)
    Abstract: Atomic layer deposition (ALD) is a vapor phase technique that is able to deposit uniform, conformal thin films with an excellent thickness control at the atomic scale. 18 nm thick Al2O3 and TiO2 coatings were deposited conformaly and pinhole-free onto micrometer-sized Cu powder, using trimethylaluminum and tetrakis(dimethylamido)titanium(IV), respectively, as a precursor and de-ionized water as a reactant. The capability of the ALD coating to protect the Cu powder against corrosion was investigated. Therefore, the stability of the coatings was studied in solutions with different pH in the range of 0–14, and in situ raman spectroscopy was used to detect the emergence of corrosion products of Cu as an indication that the protective coating starts to fail. Both ALD coatings provide good protection at standard pH values in the range of 5–7. In general, the TiO2 coating shows a better barrier protection against corrosion than the Al2O3 coating. However, for the most extreme pH conditions, pH 0 and pH 14, the TiO2 coating starts also to degrade.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2019
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 10
    Online Resource
    Online Resource
    American Vacuum Society ; 2017
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 35, No. 1 ( 2017-01-01)
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 35, No. 1 ( 2017-01-01)
    Abstract: Due to its excellent conformality, atomic layer deposition (ALD) has become a key method for coating and functionalizing three dimensional (3D) large surface area structures such as anodized alumina (AAO), silicon pillars, nanowires, and carbon nanotubes. Large surface area substrates often consist of arrays of quasi-one-dimensional holes (into which the precursor gas needs to penetrate, e.g., for AAO), or “forests” of pillars (where the precursor gas can reach the surface through the empty 3D space surrounding the pillars). Using a full 3D Monte Carlo model, the authors compared deposition onto an infinite array of holes versus an infinite array of pillars. As expected, the authors observed that the required exposure to conformally coat an array of holes is determined by the height to width ratio of the individual holes, and is independent of their spacing in the array. For the pillars, the required exposure increases with decreasing center-to-center distance and converges in the limit to the exposure of an array of holes. Our simulations show that, when targeting a specific surface area enhancement factor in the range 20–100, a well-spaced pillar geometry requires a 2–30 times smaller precursor exposure than a hole geometry and is therefore more ALD friendly. The difference in required exposure is shown to depend on the initial sticking probability and structural dimensions.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2017
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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