In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 144 ( 1988)
Abstract:
The effect of Ar sputtering, in combination with different dielectric cappings, on the disordering of AlGaAs/GaAs multiple quantum wells was studied. It was found that the combination of Ar sputter etch and SiO 2 capping provided the strongest enhancement in disordering. This effect generates enough change in refractive index to produce an index guided laser.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-144-531
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1988
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