In:
Applied Physics Letters, AIP Publishing, Vol. 82, No. 23 ( 2003-06-09), p. 4184-4186
Abstract:
Atomic hydrogen cleaning followed by heat cleaning at 450 °C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 °C heat cleaning. The low-temperature cleaning technique was applied to thin strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 s was extended by a factor of 100.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2003
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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