In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 3R ( 2011-03-01), p. 031002-
Abstract:
The structural behaviour of lattice mismatched AlInN/GaN-based multilayer structures grown on sapphire substrates by metal organic vapour phase epitaxy has been studied in-situ by curvature and real-surface temperature measurement, and ex-situ by atomic force microscope, field-emission secondary electron microscope, Nomarski microscope and various X-ray diffraction techniques. Samples grown with AlInN layers obtaining a slightly lower and a higher indium concentration compared to the lattice matched samples show a strong degradation of the AlInN/GaN double layers. The degradation of the multilayer structures both on a microscopic and on a macroscopic scale is investigated, revealing a much stronger roughening of the AlInN surfaces with higher indium concentration. The roughening is attributed to a Stranski–Krastanov transition from two-dimensional to three-dimensional growth mode.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.031002
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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