In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 12R ( 2001-12-01), p. 6683-
Abstract:
To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.6683
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink