In:
Journal of Applied Physics, AIP Publishing, Vol. 111, No. 3 ( 2012-02-01)
Abstract:
Valence subband properties and hole effective masses of PMOS inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates are studied theoretically based on the Luttinger-Kohn Hamiltonian. The subband structures under investigation are a result of the quantized levels produced by the triangular quantum well in the inversion layer created by the applied gate bias in the z-direction. Valence subband properties including constant-energy-contours, density-of-states, quantized effective mass in the z-direction mz, carrier concentration effective mass mcc, and conductivity effective mass mσ are calculated as functions of the Ge concentration at gate electric field of 1 MV/cm. An analytic expression for the Fermi level is derived in terms of mcc, the total hole concentration, and subband edges. Our results show that in general mσ in the (110) system is lower than that in the (111) substrate orientation, which implies that (110) Si substrate is more favorable for carrier transport. Furthermore, mσ in the [−110] direction of the (110) Si substrate system are the lightest among all other cases.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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