In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7A ( 1997-07-01), p. L874-
Abstract:
High-dielectric Ba 0.5 Sr 0.5 TiO 3 (BST) thin films are grown on Ir and IrO 2 electrodes by a rf sputtering method. The structural and electrical properties of BST films are investigated. After postannealing at 750° C for 30 min in N 2 atmosphere, the interface between BST and IrO 2 remains flat and the IrO 2 does not show any structural change. On the other hand, a thin IrO 2 layer is formed at the interface between the BST and Ir after the same post-annealing. A larger grain size of BST film is obtained on the Ir electrode compared to that of BST film on the IrO 2 electrode. Dielectric constants of 36-nm-thick BST films on Ir and IrO 2 are 338 and 290, respectively. The leakage current densities of both the Pt/BST/Ir and Pt/BST/IrO 2 capacitors are about 20 nA/cm 2 at ±1.5 V, which is sufficiently small for application to dynamic random access memory devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L874
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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