In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 22, No. 7 ( 2007-07), p. 1899-1906
Abstract:
The growth of HfO 2 thin films on a HF-dipped p-Si(100) substrate at 200 °C by atomic-layer deposition (ALD) using Hf[N(C 2 H 5 )(CH 3 )] 4 and H 2 O vapor as precursors is demonstrated. Uniform HfO 2 thin films are obtained on a 4-in. silicon wafer, and the energy-band gap and band offset are determined by x-ray photoelectron spectroscopy analysis. The as-deposited HfO 2 thin film is amorphous and able to crystallize at 500 ∼ 600 °C with only the monoclinic phase. As for the electrical performance of Au–Ti–HfO 2 –Si metal oxide semiconductor capacitors, a dielectric constant of ∼17.8 and an equivalent oxide thickness value of ∼1.39 nm are obtained from the 40-cycle ALD film after annealing at 500 °C. In addition, the breakdown field is in the range of 5 ∼ 5.5 MV/cm, and the fixed charge density is on the order of 10 12 cm −2 , depending on the annealing temperatures. The interface quality of HfO 2 thin films on silicon is satisfactory with an interface-trap charge density of ∼3.7 × 10 11 cm −2 eV −1 .
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/jmr.2007.0242
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2007
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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