In:
physica status solidi (a), Wiley, Vol. 218, No. 2 ( 2021-01)
Abstract:
Herein, a Ta 2 O 5 ‐based resistive synaptic device with high symmetricity and enhanced switching ratio is successfully obtained by the formation of sub‐TaO x with enriched oxygen vacancies into Ta 2 O 5 switching layers. The concentration of Ta nanoclusters in Ta 2 O 5 can be precisely controlled using plasma‐enhanced atomic layer deposition (PE‐ALD), where the number of cycles is varied from 5 to 20 cycles with steps of five cycles. The as‐fabricated Ta 2 O 5 resistive synaptic device containing Ta deposited using five cycles exhibits increased switching window and switching current. As a result, the linearity of potentiation/depression improves significantly from 13.53/−16.83 to 4.45/−1.38 by applying successive programing pulses, indicating that the recognition accuracy of the Mixed National Institute of Standards and Technology pattern is increased by 11.45% compared with the pristine device. It is considered that the introduction of an optimal number of Ta deposition cycles can effectively control the porosity of the Ta 2 O 5 layer, resulting in an increase in the movement of oxygen ions and analog switching behavior. Thus, a facile PE‐ALD technique can be applied to demonstrate highly reliable analog synaptic devices for neuromorphic hardware systems.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.202000534
Language:
English
Publisher:
Wiley
Publication Date:
2021
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
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