In:
Scientific Reports, Springer Science and Business Media LLC, Vol. 6, No. 1 ( 2016-12-16)
Kurzfassung:
Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.
Materialart:
Online-Ressource
ISSN:
2045-2322
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2016
ZDB Id:
2615211-3
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