In:
Journal of Applied Physics, AIP Publishing, Vol. 92, No. 3 ( 2002-08-01), p. 1718-1720
Abstract:
A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 μm operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2002
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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