In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 7R ( 1999-07-01), p. 4226-
Abstract:
The high quality silicon oxide films were prepared by plasma-enhanced
chemical vapor deposition (PECVD) using tetraethylorthosilicate (TEOS)-oxygen based chemistry. The O 2 - or N 2 O-plasma treatments were
performed on the as-deposited films as an attempt to improve the properties of the TEOS oxide films. TEOS oxide film deposited at lower pressure had
lower Si–OH content, less carbon impurity, and flatter surface, and hence had better electrical properties. Both O 2 - and N 2 O-plasma would decrease
the oxygen content of the oxide film, which led the composition of the film to deviate from the stoichiometric SiO 2 . The O 2 -plasma treatment did not
show the encouraging effect on the chemical structure and electrical properties of the TEOS oxide films. In contrast, the N 2 O-plasma
treatment could be a promising means to improve the breakdown field and leakage current density of the TEOS oxide films, which was accomplished
by the N 2 O-plasma effect to facilitate the passivation of dangling bonds,
linking reaction of Si–OH bonds, nitridation reaction and densification of the amorphous silicon oxide network.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.4226
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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