In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 1R ( 2013-01-01), p. 014101-
Abstract:
The resistance distribution in the crystalline (SET) state of phase change memory (PCM) is experimentally investigated at the array level using an 8 Mbit test chip. The SET distribution shows a high resistance tail, which potentially affects the reading margin of the chip. To further understand the anomalous behaviors of these tail cells, the SET resistances are characterized in terms of the programming pulse current magnitude and duration. These tail cells are probably caused by incomplete crystallization of the inactive region of phase change material. Finally, an optimization approach of applying a direct current of 0.6 mA to these tail cells is proposed and experimentally verified.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.014101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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