In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 178-179 ( 2011-8), p. 172-177
Abstract:
Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared absorption band at 1207cm-1 can be newly observed in the case of carbon content being above 1.7×1017/cm3, whose intensity increases with an increase of carbon concentration in silicon crystal. More interestingly, the 1207cm-1 band cannot be influenced by the long-time annealing in the temperature range of 450-1250oC, suggesting the high thermal stability of this carbon-related defect, which might be related to the presence of silicon carbide in silicon crystals.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.178-179
DOI:
10.4028/www.scientific.net/SSP.178-179.172
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2011
detail.hit.zdb_id:
2051138-3
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