In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
Abstract:
In this work, CuIn 1 - x Ga x Se 2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu 2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.
Type of Medium:
Online Resource
ISSN:
1556-276X
DOI:
10.1186/1556-276X-9-280
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2014
detail.hit.zdb_id:
2253244-4
detail.hit.zdb_id:
3149496-1
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