In:
Radioelectronics. Nanosystems. Information Technologies., Editorial Board of Journal Radioelectronics, Nanosystems, Information Technology RENSIT, Vol. 13, No. 4 ( 2021-12-29), p. 419-426
Abstract:
The surface of thin films of Nb, Al, NbTiN, SiO2, Al2O3 is investigated in this work. These films are necessary for the fabrication of high-sensitive devices of THz range. The fabrication processes of such devices are described briefly. All films were fabricated using a Kurt J. Lesker magnetron sputtering system. The study of the film surface roughness was carried out using a Bruker Ikon atomic force microscope. The surface quality of films is determined not only deposition mode, but plasma etching process also. The best values of the root-mean-square deviation of the surface profile Rq = 2 nm were obtained for the used NbTiN film with a thickness of 325 nm. Thin Al-layers that is used for tunnel barrier formation is studied. It is shown than Al films with a thickness of more than 6 nm are already continuous. The surface roughness of the single-layer and multilayer films has been studied.
Type of Medium:
Online Resource
ISSN:
2218-3000
,
2414-1267
Uniform Title:
Исследование тонких пленок для изготовления туннельных переходов Nb/AlN/NbN и линий передач NbTiN-SiO2-Al.
DOI:
10.17725/rensit.2021.13
DOI:
10.17725/rensit.2021.13.419
Language:
Unknown
Publisher:
Editorial Board of Journal Radioelectronics, Nanosystems, Information Technology RENSIT
Publication Date:
2021
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