In:
Applied Physics Express, IOP Publishing, Vol. 15, No. 11 ( 2022-11-01), p. 116503-
Abstract:
In this study, a 10 nm u-GaN etching buffer layer was designed and inserted into the standard p-GaN/AlGaN/GaN high electron mobility transistor structure to improve the p-GaN etching process. The experimental result shows that the device with the u-GaN layer can avoid the over-etched issue, further improving the uniformity of the etching profile and the ON-resistance of the devices. The simulation result indicates that the drain current would slightly increase due to reduced conduction band raising when the u-GaN layer is inserted. In sum, the process uniformity can improve when the u-GaN layer is inserted and in the meantime, excellent device characteristics are maintained.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/ac9c45
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
2403350-9
detail.hit.zdb_id:
2417569-9
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