In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 2R ( 1997-02-01), p. 749-
Abstract:
Ferroelectric (Pb 0.9 Sr 0.1 )(Zr 0.53 Ti 0.47 )O 3 (PSZT) thin film capacitors were prepared on Si substrates with a platinum-electrode coated on the underside by a sol–gel method. X-ray diffraction patterns showed that PSZT thin films were polycrystalline and the peaks of perovskite structure appeared uniquely in films annealed above 650°C. Ferroelectricity and electric conduction characteristics were observed by measuring the frequency dependent dielectric constant ( ε ′ – f ), the capacitance versus voltage ( C – V ), the ferroelectric hysteresis ( D – E ) loops, and the leakage current density versus field ( J – E ). The remanent polarization and the coercive field using a sinusoidal voltage of 1 kHz and 10 V were approximately 21 µC/cm 2 and 67 kV/cm, respectively. The ohmic conduction and space-charge-limited current conduction were the dominant charge transport mechanisms in sol–gel deposited PSZT films. The resistivity of PSZT films in ohmic conduction region was 4×10 8 Ωcm and the density of traps was about 6.5×10 19 cm -3 . The drift mobility at room temperature was about 86 cm 2 /Vs for a 240-nm-thick film and 42 cm 2 /Vs for a 400-nm-thick film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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