In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 31, No. 8 ( 2016-04-28), p. 1018-1026
Abstract:
The refractory nature of BaTiO 3 leads to limited densification and grain growth for films processed at low temperatures and a modest nonlinear dielectric response due to a marked sensitivity to physical scale and material quality. Adding liquid-forming sintering aids, common in bulk ceramics, to thin films enhances mass transport, leading to enhanced grain growth at lower temperatures. This work explores the effectiveness of a sputtered CuO buffer layer with BaO–B 2 O 3 (BBO) fluxes to engineer the microstructure of BaTiO 3 films. Grain size and homogeneity increase in the presence of even a ∼1 nm CuO layer. In general, grain size increases from 75 to 370 nm with an addition of 2.2% BBO and 8 nm CuO. Room temperature capacitance in fluxed films increases by a factor of 5 over pure films, and ferroelectric phase transitions are clearly observable in dielectric measurements. CuO–BBO proves effective on (0001) Al 2 O 3 and (100) MgO substrates, although all microstructures are notably finer for the latter.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2016
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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