In:
Advanced Optical Materials, Wiley
Abstract:
The demand for charge‐coupled device (CCD) imagers has surged exponentially during the last decade owing to their exceptionally high quality and low noise imaging. However, they are still confronting the performance constraints of high operation power, low speed, and limited charge integration. Here, the electric‐dipole gated phototransistor operation without external gate bias is reported by using high‐ k HfO 2 dielectric material. The electrostatic coupling of photogenerated charges from the Si with the graphene channel through a 10 nm HfO 2 layer is demonstrated. The device exhibits remarkable performance in the broadband spectrum (266–1342 nm) at low drain bias voltage. The high values of responsivity, external quantum efficiency, and detectivity of 3.7 × 10 3 A W −1 , 0.72 × 10 4 , and 6.20 × 10 13 cmHz ½ W −1 , respectively, for 800 nm wavelength and 3.3 × 10 3 A W −1 , 1.31 × 10 4 , and 5.61 × 10 13 cmHz ½ W −1 , respectively, for 400 nm wavelength without gate are achieved. This discovery may potentially eliminate the requirement for gate terminals from commercial CCD devices. The power efficient features of this gateless image sensor can be fabricated at the industrial scale for the future machine vision market.
Type of Medium:
Online Resource
ISSN:
2195-1071
,
2195-1071
DOI:
10.1002/adom.202300910
Language:
English
Publisher:
Wiley
Publication Date:
2023
detail.hit.zdb_id:
2708158-8
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