In:
physica status solidi (a), Wiley, Vol. 209, No. 2 ( 2012-02), p. 317-322
Abstract:
Highly (001)‐textured, photoactive WS 2 films, which could be deposited before only on insulating substrates, have been prepared on polycrystalline metal layers, which can be used as back contacts for electronic WS 2 devices, for instance for thin film solar cells. The WS 2 films were prepared by the amorphous‐solid‐liquid‐crystalline‐solid (aSLcS) crystallization process from a Ni–S eutectic. However, normal polycrystalline metallic films can not be used as back contact layers, caused by the diffusion of the thin metal promoter (Ni) into the back contact layer, before a nickel–sulfur eutectic can be formed. Preventing the diffusion of the metal promoter into the back contact allows using the well‐known metal‐promoter assisted crystallization to grow photoactive films on different back contacts, like TiN:O. Additionally, WS 2 films on tungsten layers could be grown by Ni‐induced sulfidation of W films. Based on these experiments the model of the rapid nickel sulfide induced crystallization was modified: Ni assists the growth of WS 2 crystallites already at temperatures between 500 and 600 °C leading to WS 2 films with differently oriented crystallites. At temperatures above the Ni–S eutectic temperature (637 °C) liquid NiS x droplets induce, as reported earlier, a rapid recrystallization, which leads to WS 2 films with strong (001) orientation.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201127524
Language:
English
Publisher:
Wiley
Publication Date:
2012
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
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